Nanomechanical memory demoed Image TRN 111704

Description: The thin lines to the left are microscopic silicon bars that flex slightly from side to side when a current is applied. Each is the principal component of a nanomechanical memory cell. The numbers indicate the memory's speed. The longest bar measures eight microns.

Source: Boston University

Story: Nanomechanical memory demoed
TRN November 17/24, 2004

TRN Categories: Data Storage Technology; Nanotechnology; Materials Science and Engineering

Form: Still

Home Archive Resources Feeds Offline Publications Glossary

TRN Finder Research Dir. Events Dir. Researchers Bookshelf

Contribute Under Development T-shirts etc. Classifieds

Forum Comments Feedback About TRN

TRN Newswire and Headline Feeds for Web sites