Stressed silicon goes faster Image2 TRN 061301

Description: This prototype transistor uses a layer of strained silicon to speed the flow of electrons from its source electrical contact to its drain contact. The gate produces an electric field that switches on the flow of electrons between the source and drain.

Source: IBM Research

Story: Stressed silicon goes faster
TRN June 13/20, 2001

TRN Categories: Semiconductors

Form: Still

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